The MeRAM are memories of up to 1000 times faster, able to increase the density and reduce energy consumption.
Memories of tomorrow will be much faster than current ones and on this idea seem to be all along. The main problem today is the emergence of a new technology that will take to storage the leap necessary: there are different ideas in this area, all based on different concepts. The latest comes from the University of California, thanks to MeRAM: Magnetoelectric Random Access Memory, the case of non-volatile memory that promise speeds of up to a thousand times higher than at present, with additional benefits related to other aspects.
The magnetic memories today make use of the so-called “spin-transfer torque” (STT), an effect linked to the magnetism which requires the passage of electric current in order to show their effects. The MeRAM, instead, rely on its own foundations on a different principle, using voltages rather than currents: the advantages in this respect relate mainly to the absence of movements of electrons within the semiconductor, with clear benefits, especially in terms of speed and dissipation of heat.
Writing information is then by means of electrical potentials, effectively requiring much less power than current memory. This result, as said, losses due to energy conversion into heat considerably lower, with operating temperatures profoundly lower. But not only: the lower the required power, the lower the impact on the autonomy of the devices that will use it, with advantages therefore also for the duration of the batteries. These memories, in fact, are well suited to mobile applications such as smartphones, tablets and notebooks, allowing at once to speed up the data access and reduces energy consumption.
A further advantage resides then in the possibility of increase of five times the bit density per unit area, extending in fact the capacity of the memories or, to watch the question from another point of view, reducing the cost per bit of such devices. The MeRAM, in short, could open the door to a market characterized by memory getting cheaper, faster and more affordable, without raising the cost of purchase. At the moment, however, is not yet known a possible date of arrival of such technology in the device of all days.